New Innovations in multi-wafer processing technology!

The latest upgrade to the LabStar platform sees the addition of multi-wafer processing options to the Reactive Ion Etch toolset.

In addition to the existing operating efficiencies offered by the LABStar platform of RIE etch equipment, users can now avail of the option to process multiple substrates. This facilitates the simultaneous processing of substrates, reducing the overall processing time while maintaining excellent uniformity.

The new generation LABStar system is available in the following variants:

  • 12 inch single wafer
  • 6 inch x 5 wafers
  • 4 inch x 12 wafers

The system design has been updated to include the latest available technology to provide the maximum processing capabilities and throughput with a reduced overall footprint.

4 inch wafer by 12 locations

LABStar RIE Etcher with 12 x 4 inch wafer locations

 

6 inch wafer by 5

LABStar RIE Etcher with 5 x 6 inch wafer locations

12 inch wafer by 1

 LABStar RIE Etcher with 1 x 12 inch wafer location

 

LABStar system

LABStar RIE Etcher System

LABStar system with control station

LABStar RIE Etcher system with Control Unit

LABStar Platform 200mm & 300mm System Features 

 

LABStar+ System 200mm Chuck

 
# System Standard Features (alternative configurations and features available)
1 Labstar200-RIE TMP, Chiller, 4 gas channels, 600W RF
2 Labstar200-PECVD Heater (Top & Bottom), 4 gas channels, 600W RF
3 Labstar200-ICP

TMP, Chiller, 4 gas channels, 600W Bias, 2000W ICP

4 Labstar200-Sputter 8 inch target, TMP, Chuck Heater, Chiller, 2 gas channels, 600W RF or 2kW DC selection
 

Common Features:
Wafer Size : Piece ~ 8 inch, Computer Control, 17" Monitor, EtherCAT IO, Rotary pump

 
 

Option: Dry pump

 
 

Labstar System 300mm Chuck

 
1 Labstar300 - RIE TMP, Chiller, 4 gas channels, 600W RF
2 Labstar300 - PECVD Heater (Top & Bottom), 4 gas channels, 600W RF
3 Labstar300 - ICP TMP, Chiller, 4 gas channels, 600W Bias, 2000W ICP
4 Labstar300 - Sputter 8 inch target, TMP, Chuck Heater, Chiller, 2 gas channels, 600W RF or 2kW DC selection
  Common Features:
Wafer Size : Piece ~ 12 inch, Computer Control, 17" Monitor, EtherCAT IO, Rotary pump
 
  Option: Dry pump  

PECVD Deposition System:

  • Optimised PECVD sources for wafer sizes up to 12 inches
  • Uniform gas distribution via an optimised baffle plate and shower head
  • Heated chuck: up to 400°C
  • High-rate and high-quality deposition
  • Ge, SiO2, SiN, a-Si,SiON, poly-Si, a-SiC

PECVD Process Module

PECVD Process Module

pecvd1Germanium Doped SiliconTetraethyl Orthosilicate (TEOS)

 

ICP & RIE Etching System:

  • Optimised ICP Sources for wafer sizes up to 12 inches
  • Optional Faraday shield enables etching uniformity control
  • Electrodes available for temperatures from -30°C to 400°C (optional)
  • Anisotropic etching of all types of solicon-based films for ULSI devices
  • Etching of GaAs, GaN, InP and other compound semiconductor materials
  • Etching of metal films - Cr, Al, W, Au, Pt, and others
  • Polymer etching, photoresist strip and surface cleaning

 

Etch Process Module

Etch Process Module

Etch Profile 1Etch Profile 2Etch Profile 3

 

Note: The above specifications relate to entry-level systems. Higher specification systems are available on request.