• Optimized ICP sources for wafer sizes from 50mm to 300mm and carriers available for multi-wafer batches.
  • Optional Faraday shield enables etch uniformity control
  • Chamber wall and ICP source heating reduce cleaning requirements and increase uptime
  • Highest pumping conductance giving wider process window
  • Electrodes available for temperatures from -30°C to +400°C and beyond

Applications

  • Anisotropic etching of all types of silicon-based films for ULSI devices
  • Etching of GaAs, GaN, InP and other compound semiconductor materials
  • Low-damage etching of III-V compounds
  • Fabrication of waveguide devices
  • Etching of metal films - Cr, Al, W, Au, Pt and others
  • Patterned sapphire etching for LED
  • Polymer etch, photoresist strip and surface cleaning